半導體物理性能手冊 第2捲(下) 下載 mobi epub pdf 電子書 2024

基本信息

書名:半導體物理性能手冊 第2捲(下)

定價：248.00元

售價：168.6元,便宜79.4元,摺扣67

作者:(日)足立貞夫

齣版社：哈爾濱工業大學齣版社

齣版日期：2014-04-01

ISBN：9787560345178

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頁碼：

版次：1

裝幀：平裝

開本：16開

商品重量：0.4kg

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內容提要

足立貞夫編著的《半導體物理性能手冊(第2捲下 )/Springer手冊精選原版係列》介紹瞭各族半導體、化閤物半導體的物理性能，包括： Structural Properties結構特性 Thermal Properties熱學性質 Elastic Properties彈性性質 Phonons and Lattice Vibronic Properties 聲子與晶格振動性質 Collective Effects and Related Properties集體效應及相關性質 Energy-Band Structure：Energy-Band Gaps 能帶結構：能帶隙 Energy—Band Structure：Electron and Hole Effective Masses能帶結構：電子和空穴的有效質量 Electronic Deformation Potential電子形變勢 Electron Affinity and Schottky Barrier Height電子親和能與肖特基勢壘高度 Optical Properties光學性質 Elastooptic，Electrooptic， andNonlinearOptical Properties彈光、電光和非綫性光學性質 Carrier Transport Properties載流子輸運性質 《半導體物理性能手冊(第2捲下)/Springer手冊精選原版係列》適用對象包括材料、微電子學、電子科學與技術等專業的本科生和研究生，以及從事半導體研究的專業人員。

目錄

Preface
Acknowledgments
Contents of Other Volumes
10 Wurtzite Gallium Nitride (a-GaN)
10.1 Structural Properties
10.1.1 Ionicity
10.1.2 Elemental Isotopic Abundance and Molecular Weight
10.1.3 Crystal Structure and Space Group
10.1.4 Lattice Constant and Its Related Parameters
10.1.5 Structural Phase Transition
10.1.6 Cleavage Plane
10.2 Thermal Properties
10.2.1 Melting Point and Its Related Parameters
10.2.2 Specific Heat
10.2.3 Debye Temperature
10.2.4 Thermal Expansion Coefficient
10.2.5 Thermal Conductivity and Diffusivity
10.3 Elastic Properties
10.3.1 Elastic Constant
10.3.2 Third-Order Elastic Constant
10.3.3 Young's Modulus, Poisson's Ratio, and Similar
10.3.4 Microhardness
10.3.5 Sound Velocity
10.4 Phonons and Lattice Vibronic Properties
10.4.1 Phonon Dispersion Relation
10.4.2 Phonon Frequency
10.4.3 Mode Gruneisen Parameter
10.4.4 Phonon Deformation Potential
10.5 Collective Effects and Related Properties
10.5.1 Piezoelectric Constant
10.5.2 Frohlich Coupling Constant
10.6 Energy-Band Structure: Energy-Band Gaps
10.6.1 Basic Properties
10.6.2 E0-Gap Region
10.6.3 Higher-Lying Direct Gap
10.6.4 Lowest Indirect Gap
10.6.5 Conduction-Valley Energy Separation
10.6.6 Direct-Indirect-Gap Transition Pressure
10.7 Energy-Band Structure: Electron and Hole Effective Masses
10.7.1 Electron Effective Mass: F Valley
10.7.2 Electron Effective Mass: Satellite Valley
10.7.3 Hole Effective Mass
10.8 Electronic Deformation Potential
10.8.1 Intravalley Deformation Potential: F Point
10.8.2 Intravalley Deformation Potential: High-Symmetry Points
10.8.3 Intervalley Deformation Potential
10.9 Electron Affinity and Schottky Barrier Height
10.9.1 Electron Affinity
10.9.2 Schottky Barrier Height
10.10 Optical Properties
10.10.1 Summary of Optical Dispersion Relations
10.10.2 The Reststrahlen Region
10.10.3 At or Near the Fundamental Absorption Edge
10.10.4 The Interband Transition Region
10.10.5 Free-CarrierAbsorption and Related Phenomena
10.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
10.11.1 Elastooptic Effect
10.11.2 Linear Electrooptic Constant
10.11.3 Quadratic Electrooptic Constant
10.11.4 Franz-Keldysh Effect
10.11.5 Nonlinear Optical Constant
10.12 Carrier Transport Properties
10.12.1 Low-Field Mobility: Electrons
10.12.2 Low-Field Mobility: Holes
10.12.3 High-Field Transport: Electrons
10.12.4 High-Field Transport: Holes
10.12.5 Minority-Carrier Transport: Electrons inp-Type Materials
10.12.6 Minority-Carrier Transport: Holes in n-Type Materials
10.12.7 Impact Ionization Coefficient
11 Cubic Gallium Nitride(b-GaN)
12 Gallium Phosphide(Gap)
13 Gallium Arsenide(GaAs)
14 Gallium Antimonide(GaSb)
15 Indium Nitride(InN)
16 Indium Phosphide(InP)
17 Indium Arsendide(InAs)
18 Indium Antimonide(InSb)

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