化閤物半導體加工中的錶徵下載 mobi epub pdf 電子書 2024

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圖書介紹

店鋪：智博天恒圖書專營店

齣版社：哈爾濱工業大學齣版社

ISBN：9787560342818

商品編碼：29459516003

包裝：平裝

齣版時間：2014-01-01

圖書描述

圖書基本信息
圖書名稱	化閤物半導體加工中的錶徵
作者	(美)布倫德爾等
定價	68.00元
齣版社	哈爾濱工業大學齣版社
ISBN	9787560342818
齣版日期	2014-01-01
字數
頁碼
版次	1
裝幀	平裝
開本	16開
商品重量	0.4Kg

內容簡介

化閤物半導體加工中的錶徵一書是為使用化閤物半導體材料與設備的科學傢與工程師準備的，他們並不是錶徵專傢。在研發與GaAs、GaA1As、LnP及HgCdTe基設備的製造中通常使用的材料與工藝提供常見的分析問題實例。這本布倫德爾、埃文斯、麥剋蓋爾編著的《化閤物半導體加工中的錶徵》討論瞭各種錶徵技術，深入瞭解每種技術是如何單獨或結閤使用來解決與材料相關的問題。這本書有助於選擇並應用適當的分析技術在材料與設備加工的各個階段，如：基體處理、外延生長、絕緣膜沉積、接觸組、摻雜劑的引入。

作者簡介

Preface to the Reissue of the Materials Characterization Series
Preface to Series
Preface to the Reissue of Characterization of Compound
Semiconductor Processing
Preface xiii
Contributors xv
CHARACTERIZATION OF III-V THIN FILMS FOR ELECTRONIC DEVICES
1.1 Introduction
1.2 Surface Characterization of GaAs Wafers
Dislocations 3, Surface Composition and Chemical State
1.3 Ion Implantation
1.4 Epitaxial Crystal Growth
1.5 Summary
Ⅲ-V POUND SEMICONDUCTOR FILMS FOROPTICAL APPLICATIONS
2.1 Introduction
2.2 Growth Rate/LayerThickness
In Situ Growth Monitors 20, Post-Growth Structural Analysis
2.3 Composition Analysis
2.4 Impurity and Dopant Analysis
2.5 Electrical Properties in Optical Structures
2.6 Optical Properties in Single and Multilayer Structures
2.7 Interface Properties in Multilayer Structures
2.8 Summary
CONTACTS
3.1 Introduction
3.2 In Situ Probes
Surface Preparation and Characterization 44, Initial Metal Deposition 45,
Subsequent Metal Deposition
3.3 Unpatterned Test Structures
Electrical Characterization 48, Concentration Profiling 49,
Electron Microscopy
3.4 Patterned Test Structures
Barrier Height 51, Contact Resistance 53, Morphology
DIELECTRIC INSULATING LAYERS
4.1 Introduction
4.2 Oxides and Oxidation
4.3 HeteromorphicInsulators
4.4 Chemical Modification of GaAs Surfaces
4.5 Indium Phosphide-Insulator Interfaces
4.6 Heterojunction Quasi-Insulator Interfaces
4.7 Epitaxial Fluoride Insulators
4.8 Commentary
OTHER POUND SEMICONDUCTOR FILMS
5.1 Introduction
A Focus on HgCdTe 83, Objective and Scope 84, Background 84,
Representative Device Structure
5.2 Substrates and the CdTe Surface (Interface 1)
Substrate Quality 86, Substrate Surface Preparation
5.3 Epitaxial HgCdTe Materials (Between Interfaces 2 and 5)
Desired Characteristics of the Active Layers 90, Composition 90,
Crystalline Quality 91, Doping 93, Minority Carrier Lifetime
5.4 Heterojunction Interfaces (Interface 3)
Advantages of the Heterojunction 98, Desired Characteristics 98,
Characterizations
5.5 HgCdTe Surface Preparation (Interfaces 4 and 5)
Importance of the Chemically Etched Surface 100, Monitoring of the Surface
Cleanliness by Ellipsometry 101, Characterization of Thin Native Oxides on HgCdTe by XPS 102, Surface Analysis by UPS
5.6 Summary
DEEP LEVEL TRANSIENT SPECTROSCOPY: A CASE STUDY ON GaAs
6.1 Introduction
6.2 DLTS Technique: General Features
6.3 Fabrication and Qualification of Schottky Diodes
6.4 DLTS System
6.5 DLTS Measurement Procedure
6.6 Data Analysis
DLTS Spectrum 117, Activation Energy for Thermal Emission 118,
Trap Densities
6.7 EL2 Center
6.8 Summary
APPENDIX: TECHNIQUE SUMMARIES
1 Auger Electron Spectroscopy (AES)
2 Ballistic Electron Emission Microscopy (BEEM)
3 Capacitance-Voltage (C-V) Measurements
4 Deep Level Transient Spectroscopy (DLTS)
5 Dynamic Secondary Ion Mass Spectrometry (D-SIMS)
6 Electron Beam Induced Current (EBIC) Microscopy
7 Energy-Dispersive X-Ray Spectroscopy (EDS)
8 Focused Ion Beams (FIBs)
9 Fourier Transform Infrared Spectroscopy (FTIR)
10 Hall Effect Resistivity Measurements
11 Inductively Coupled Plasma Mass Spectrometry (ICPMS)
12 Light Microscopy
13 Low-Energy Electron Diffraction (LEED)
14 Neutron Activation Analysis (NAA)
15 Optical Scatterometry
16 Photoluminescence (PL)
17 Raman Spectroscopy
18 Reflection High-Energy Electro 化閤物半導體加工中的錶徵下載 mobi epub pdf txt 電子書格式